| PART |
Description |
Maker |
| FT231XS-X FT231XQ-X DSFT231X FT231XQ-T FT231XS-R |
Future Technology Devices International Ltd FT231X
Single chip USB to asynchronous serial data transfer interface
Future Technology Devices International Ltd.
|
List of Unclassifed Manufacturers
Future Technology Devices I...
Future Technology Devic...
|
| FT230XQ-R FT230XS-XXXX FT230XQ-XXXX FT230XS-R |
Future Technology Devices International Ltd.
|
Future Technology Devic...
|
| FT232HL-REEL FT232HL-TRAY FT232HQ-REEL FT232HQ-TRA |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| FT51A-EVM |
Future Technology Devices International Datasheet
|
List of Unclassifed Man...
|
| FT313HL FT313HL-X FT313HP FT313HP-R FT313HP-X FT31 |
USB2.0 HS Embedded Host Controller
Single chip USB2.0 Hi-Speed compatible
Future Technology Devices International Ltd
|
Future Technology Devic...
List of Unclassifed Man...
|
| UPC8232T5N UPC8232T5N-E2 |
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
California Eastern Laboratories
|
| TGUI9440-2 TGUI9440-R |
GUI Accelerator
TGUI9440-2 With Future ISA Bus Support
|
Trident
List of Unclassifed Manufacturers
|
| TSOP17..XG1 TSOP1730XG102 UC1682XFBZ UPC8232T5N-E2 |
Synchronous Step-Down DC/DC Converter with built-in LDO Regulator in parallel plus Voltage Detector 同步降压型DC / DC转换器内置LDO的同时加电压检测器调节
High Performance 8-bit Microcontroller
HIGH-VOLTAGE MIXED-SIGNAL IC
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
Torex Semiconductor, Ltd.
ETC
CEL
TOREX[Torex Semiconductor]
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
